SQD23N06-31L
www.vishay.com
THERMAL RATINGS (T A = 25 °C, unless otherwise noted)
2
1
D u ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P u lse
Vishay Siliconix
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Sq u are Wave P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
? The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68869 .
S11-2065-Rev. B, 24-Oct-11
6
Document Number: 68869
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SQD35N05-26L-GE3 MOSFET N-CH D-S 55V 30A TO252
SQD40N04-10A-GE3 MOSFET N-CH D-S 40V 42A TO252
SQD50N02-04-GE3 MOSFET N-CH D-S 20V 50A TO252
SQD50P04-09L-GE3 MOSFET P-CH D-S 40V TO252
SQD50P04-13L-GE3 MOSFET P-CH D-S 40V TO252
SQD50P06-15L-GE3 MOSFET P-CH 60V 50A TO252
SQJ412EP-T1-GE3 MOSFET N-CH D-S 40V PPAK 8SOIC
SQJ461EP-T1-GE3 MOSFET P-CH D-S 60V TO252
相关代理商/技术参数
SQD25N06-22L 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQD25N06-22L-GE3 功能描述:MOSFET 60V 25A 62W N-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQD25N06-35L 制造商:Vishay Intertechnologies 功能描述:
SQD25N06-35L-GE3 功能描述:MOSFET 60V 25A 50W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQD25N15-52 制造商:SHENZHENFREESCALE 制造商全称:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:Automotive N-Channel 150 V (D-S) 175 ?°C MOSFET
SQD25N15-52-GE3 功能描述:MOSFET 150V 25A 136W 5.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQD300A40 制造商:SANREX 制造商全称:SanRex Corporation 功能描述:TRANSISTOR MODULE
SQD300A60 制造商:SANREX 制造商全称:SanRex Corporation 功能描述:TRANSISTOR MODULE